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Datasheet NTD4969N Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NTD4969NPower MOSFET, Transistor

NTD4969N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility These Devices are Pb�
ON Semiconductor
ON Semiconductor		mosfet


NTD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NTDHIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.Current o at 50 C (mA) Max. Fwd. Voltage Drop at 25 C And I O V F (Volts) o Length L Fig.3 NTD 08
EDI
EDI		rectifier
2NTDHIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.Current o at 50 C (mA) Max. Fwd. Voltage Drop at 25 C And I O V F (Volts) o Length L Fig.3 NTD 08
EDI
EDI		rectifier
3NTD08HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.Current o at 50 C (mA) Max. Fwd. Voltage Drop at 25 C And I O V F (Volts) o Length L Fig.3 NTD 08
EDI
EDI		rectifier
4NTD10HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.Current o at 50 C (mA) Max. Fwd. Voltage Drop at 25 C And I O V F (Volts) o Length L Fig.3 NTD 08
EDI
EDI		rectifier
5NTD106BThyristor/Diode Module

Naina Semiconductor Ltd. NTD106B Features Thyristor/Diode Module, 106A • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Voltage Ratings (TA = 25oC, unless otherwise noted) Type nu
Naina Semiconductor
Naina Semiconductor		diode
6NTD110N02RPower MOSFET, Transistor

NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC�
ON
ON		mosfet
7NTD110N02RGPower MOSFET, Transistor

NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC�
ON
ON		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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