NRVBAF3200T3G データシート PDFこの部品の機能は「Surface Mount Schottky Power Rectifier」です。 |
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部品番号 |
NRVBAF3200T3G Surface Mount Schottky Power Rectifier MBRAF3200, NRVBAF3200 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry featu ON Semiconductor |
文字列「 NRVBAF3200T3 」「 3200T3G 」で始まる検索結果です。 |
部品説明 |
MBRAF3200T3G Surface Mount Schottky Power Rectifier MBRAF3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit ON Semiconductor |
MBRAF3200T3G Surface Mount Schottky Power Rectifier MBRAF3200, NRVBAF3200 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ide ON Semiconductor |
MBRS3200T3G Surface Mount Schottky Power Rectifier MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. ON Semiconductor |
NRVBS3200T3G Surface Mount Schottky Power Rectifier MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. ON Semiconductor |
PTB32003X NPN microwave power transistors DISCRETE SEMICONDUCTORS DATA SHEET PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Diffused emitter NXP Semiconductors |
PTH32003 25 Watts/ 1.9-2.0 GHz 50-Ohm High-Gain Power Hybrid PTH 32003 25 Watts, 1.9–2.0 GHz 50-Ohm High-Gain Power Hybrid Description The PTH 32003 is a high–gain 50–ohm power hybrid intended for applications requiring linear amplification and high gain in the PCS frequency range. The part is designed to operate with 50–ohm source Ericsson |
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