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NRVBAF3200T3G データシート PDF

この部品の機能は「Surface Mount Schottky Power Rectifier」です。


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部品番号
NRVBAF3200T3G

Surface Mount Schottky Power Rectifier


MBRAF3200, NRVBAF3200 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry featu


ON Semiconductor
ON Semiconductor

データシート pdf



文字列「 NRVBAF3200T3 」「 3200T3G 」で始まる検索結果です。

部品説明

MBRAF3200T3G

Surface Mount Schottky Power Rectifier

MBRAF3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

ON Semiconductor
ON Semiconductor

 データシート pdf


MBRAF3200T3G

Surface Mount Schottky Power Rectifier

MBRAF3200, NRVBAF3200 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ide

ON Semiconductor
ON Semiconductor

 データシート pdf


MBRS3200T3G

Surface Mount Schottky Power Rectifier

MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact.

ON Semiconductor
ON Semiconductor

 データシート pdf


NRVBS3200T3G

Surface Mount Schottky Power Rectifier

MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact.

ON Semiconductor
ON Semiconductor

 データシート pdf


PTB32003X

NPN microwave power transistors

DISCRETE SEMICONDUCTORS DATA SHEET PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Diffused emitter

NXP Semiconductors
NXP Semiconductors

 データシート pdf


PTH32003

25 Watts/ 1.9-2.0 GHz 50-Ohm High-Gain Power Hybrid

PTH 32003 25 Watts, 1.9–2.0 GHz 50-Ohm High-Gain Power Hybrid Description The PTH 32003 is a high–gain 50–ohm power hybrid intended for applications requiring linear amplification and high gain in the PCS frequency range. The part is designed to operate with 50–ohm source

Ericsson
Ericsson

 データシート pdf

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