NP36P06SLG データシート PDFこの部品の機能は「Mos Field Effect Transistor」です。 |
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部品番号 |
NP36P06SLG MOS FIELD EFFECT TRANSISTOR DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications NEC |
文字列「 NP36P06 」「 36P06SLG 」で始まる検索結果です。 |
部品説明 |
NP36P06KDG MOS FIELD EFFECT TRANSISTOR
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36P06KDG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. NEC |
23HS3606-04 Hybrid Stepper Motors HYBRID STEPPING MOTORS 0.9˚ 2-PHASE 1.8˚ 3.6˚ 23HS SERIES 1.8° Key Features I High Torque I High Accuracy I Smooth Movement General Specifications Bi-polar Model Number 23HS0402-02 23HS0403-02 23HS0404-01 23HS0406 23HS0411 23HS0412 23HS0413 23HS1407 23HS1408 23HS2403 23 ETC |
2SC3606 Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3606 2SC3606 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collecto Toshiba Semiconductor |
2SC3606 Transistor SMD Type Silicon NPN Epitaxial Planar Type 2SC3606 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 Kexin |
2SK3606-01 N-CHANNEL SILICON POWER MOSFET 2SK3606-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible P Fuji Electric |
8403606JA 2K x 8 Asynchronous CMOS Static RAM HM-65162 March 1997 2K x 8 Asynchronous CMOS Static RAM Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinou Intersil Corporation |
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