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NP180N04TUJ PDF Datasheet

The NP180N04TUJ is Mos Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NP180N04TUJ
MOS FIELD EFFECT TRANSISTOR

NP180N04TUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0180EJ0100 Rev.1.00 Dec 17, 2010 Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automo

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP180N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP180N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP180N04TUG-E1-A

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NP180N04TUK   MOS FIELD EFFECT TRANSISTOR

NP180N04TUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0542EJ0100 Rev.1.00 Sep 23, 2011 Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.05

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MODEL HM77 SERIES Low Profile Surface Mount Inductors FEATURES AND BENEFITS • • • • High performance low loss powder iron core is excellent for high frequency applications Low profile, designed for machine placement Compatible with vapor phase and infrared reflow so

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state–of–the–art die designed for use in 2

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