NJL5195K データシート PDFこの部品の機能は「General Purpose Photo Reflector」です。 |
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部品番号 |
NJL5195K GENERAL PURPOSE PHOTO REFLECTOR NJL5191K/93K/95K MEMO [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this da New Japan Radio |
文字列「 NJL5195 」「 5195K 」で始まる検索結果です。 |
部品説明 |
1N5195 SWITCHING DIODE • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C t Microsemi |
1N5195 GENERAL PURPOSE SILICON DIODES • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED 1N5194 1N5195 1N5196 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1 Compensated Deuices Incorporated |
1N5195 Diode Switching 180V 0.2A 2-Pin DO-35 New Jersey Semiconductor |
1N5195UR LL-35 High Voltage / Current Low Leakage Glass Diodes LL-35 High Voltage / Current Use Advantages 1N5194UR thru 1N5196UR Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue l Microsemi Corporation |
1N5195UR GENERAL PURPOSE SILICON DIODES • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Opera Compensated Deuices Incorporated |
2N5195 Low voltage PNP power transistor 2N5195 Low voltage PNP power transistor Features ■ Low saturation voltage ■ PNP transistor Application ■ Audio, power linear and switching equipment Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows ex STMicroelectronics |
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