NJG1705V データシート PDFこの部品の機能は「1.5/1.9ghz Band Front-end Gaas MmIC」です。 |
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部品番号 |
NJG1705V 1.5/1.9GHz BAND FRONT-END GaAs MMIC NJG1705V 1.5/1.9GHz BAND FRONT-END GaAs MMIC n GENERAL DESCRIPTION NJG1705V is a front-end GaAs MMIC including a LNA, local amplifier and a Mixer, designed mainly for 1.5 and 1.9GHz band cellular phon New Japan Radio |
文字列「 NJG1705 」「 1705V 」で始まる検索結果です。 |
部品説明 |
1705 T-1 Subminiature Lamps T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin T-1¾ Subminiature Lamps Line No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Part No. Wire Lead 1728 1783 2169 8663 1738 Gilway Technical Lamp |
2SA1705 PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications · Voltage regulators, relay drivers, lamp drivers. Features · Adoption of FBET process. · Fast switching speed. Package Dimensions uni Sanyo Semicon Device |
2SA1705 Bipolar Transistor Ordering number : EN3025A 2SA1705 Bipolar Transistor -50V, -1A, Low VCE(sat), PNP Single NMP http://onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • Adoption of FBET process • Fast switching speed Specifications Absolute Maximum Ra ON Semiconductor |
2SB1705 Low frequency amplifier 2SB1705 Transistors Low frequency amplifier 2SB1705 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) Each lead has same dimensions 0.4 1.0MAX 0.85 0.7 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ −250mV At IC=−1.5A / IB=−30mA (3 ROHM Semiconductor |
2SD1705 Silicon NPN epitaxial planar type Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB1154 21.0±0.5 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward curre Panasonic Semiconductor |
2SK1705 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1705 DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS · Power supplies, converters and power motor controls ABSOLUTE Inchange Semiconductor |
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