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Datasheet NJD2873 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NJD2873Silicon NPN Power Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor NJD2873 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.5A ·High Current-Gain—Bandwidth Product ·Minimum Lot-to-Lot variations for robust device per
Inchange Semiconductor
Inchange Semiconductor		transistor
2NJD2873Power Transistors

NJD2873, NJVNJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Epoxy Meets UL 94 V−0 @
ON Semiconductor
ON Semiconductor		transistor
3NJD2873T4NPN Silicon DPAK For Surface Mount Applications

NJD2873T4 Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features http://onsemi.com • Pb−Free Package is Available • High DC Current Gain − • • • • hFE = 120 (Min) @ IC = 500 mA =
ON Semiconductor
ON Semiconductor		data
4NJD2873T4GPower Transistors

NJD2873, NJVNJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Epoxy Meets UL 94 V−0 @
ON Semiconductor
ON Semiconductor		transistor


NJD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NJD1718Power Transistors

NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features • Low Collector−Emitter Saturation Voltage • High Switching Speed • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for
ON Semiconductor
ON Semiconductor		transistor
2NJD1718Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor NJD1718 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed
Inchange Semiconductor
Inchange Semiconductor		transistor
3NJD1718T4GPower Transistors

NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features • Low Collector−Emitter Saturation Voltage • High Switching Speed • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for
ON Semiconductor
ON Semiconductor		transistor
4NJD2873Silicon NPN Power Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor NJD2873 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.5A ·High Current-Gain—Bandwidth Product ·Minimum Lot-to-Lot variations for robust device per
Inchange Semiconductor
Inchange Semiconductor		transistor
5NJD2873Power Transistors

NJD2873, NJVNJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Epoxy Meets UL 94 V−0 @
ON Semiconductor
ON Semiconductor		transistor
6NJD2873T4NPN Silicon DPAK For Surface Mount Applications

NJD2873T4 Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features http://onsemi.com • Pb−Free Package is Available • High DC Current Gain − • • • • hFE = 120 (Min) @ IC = 500 mA =
ON Semiconductor
ON Semiconductor		data
7NJD2873T4GPower Transistors

NJD2873, NJVNJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Epoxy Meets UL 94 V−0 @
ON Semiconductor
ON Semiconductor		transistor



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Número de pieza Descripción Fabricantes PDF
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Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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