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Datasheet NJD1718 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | NJD1718 | Power Transistors NJD1718, NJVNJD1718
Power Transistors
PNP Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier and power switching applications.
Features
• Low Collector−Emitter Saturation Voltage • High Switching Speed • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for |
 ON Semiconductor |
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| 2 | NJD1718 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
NJD1718
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed |
 Inchange Semiconductor |
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| 1 | NJD1718T4G | Power Transistors NJD1718, NJVNJD1718
Power Transistors
PNP Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier and power switching applications.
Features
• Low Collector−Emitter Saturation Voltage • High Switching Speed • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for |
ON Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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