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Datasheet NGTB15N60EG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NGTB15N60EG   IGBT

NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching los
 ON Semiconductor
ON Semiconductor		 datasheet NGTB15N60EG pdf

NGTB15N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NGTB15N60S1EG

IGBT

NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor
NGTB15N60EG

IGBT

NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and m
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor
NGTB15N60R2FG

IGBT

NGTB15N60R2FG IGBT 600V, 14A, N-Channel www.onsemi.com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.85V typ. (IC=15A, VGE=15V)  IGBT tf=75ns typ. Diode VF=1.7V typ. (IF=15A) Diode trr=95ns typ. 10s Short Circuit Capability Applications �
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor


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