NEZ5964-8D データシート PDFこの部品の機能は「4w/8w C-band Power Gaas Fet N-channel Gaas Mes Fet」です。 |
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部品番号 |
NEZ5964-8D 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high outp NEC |
文字列「 NEZ59648 」「 5964 」で始まる検索結果です。 |
部品説明 |
2SC5964 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Ordering number : ENN7988 2SA2125 / 2SC5964 2SA2125 / 2SC5964 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features • • • • A Sanyo Semicon Device |
2SC5964 Bipolar Transistor Ordering number : EN7988B 2SA2125/2SC5964 Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT process • Low collector t ON Semiconductor |
C5964 NMOS multichannel detector head Hamamatsu |
EIC5964-10 Internally Matched Power FET EIC5964-10 UPDATED 08/21/2007 5.90-6.40 GHz 10-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • 5.90–6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 10.0 dB Excelics Semiconductor |
EIC5964-4 Internally Matched Power FET EIC5964-4 UPDATED 08/21/2007 5.90-6.40 GHz 4-Watt Internally Matched Power FET FEATURES • • • • • • • 5.90–6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compre Excelics Semiconductor |
EIC5964-5 Internally Matched Power FET EIC5964-5 5.90-6.40 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • • 5.90 – 6.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Powe Excelics Semiconductor |
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