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NESG210833 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 NESG210833

NPN SiGe RF TRANSISTOR

DATA SHEET www.Datasheet.jp NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz • PO

NEC
NEC
NESG210833 データシート pdf




NESG210 データシート - 検索結果

部品番号 部品説明 メーカ PDF
NESG210833

NPN SiGe RF TRANSISTOR

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 d

NEC
NEC
NESG210833 データシート pdf
NESG210719

NECs NPN SiGe TRANSISTOR

PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG210719 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD (19) PACKAG

NEC
NEC
NESG210833 データシート pdf
NESG2107M33

NECs NPN SILICON TRANSISTOR

PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • • • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATI

California Eastern Labs
California Eastern Labs
NESG210833 データシート pdf
NESG2101M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at

NEC
NEC
NESG210833 データシート pdf


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