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NESG210833 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 NESG210833

NPN SiGe RF TRANSISTOR

DATA SHEET www.Datasheet.jp NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz • PO

NEC
NEC
NESG210833 データシート pdf



NESG210 Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
NESG2107M33

NECs NPN SILICON TRANSISTOR

PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • • • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATI

California Eastern Labs
California Eastern Labs
NESG210833 データシート pdf
NESG210833

NPN SiGe RF TRANSISTOR

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 d

NEC
NEC
NESG210833 データシート pdf
NESG210719

NECs NPN SiGe TRANSISTOR

PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG210719 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD (19) PACKAG

NEC
NEC
NESG210833 データシート pdf
NESG2101M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at

NEC
NEC
NESG210833 データシート pdf
NESG2101M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at

NEC
NEC
NESG210833 データシート pdf
NESG2101M16

NPN SiGe HIGH FREQUENCY TRANSISTOR

PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB

CEL
CEL
NESG210833 データシート pdf
NESG2101M05

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at

NEC
NEC
NESG210833 データシート pdf


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