NES1821B-30 データシート PDFこの部品の機能は「30w L-band Power Gaas Fet N-channel Gaas Mes Fet」です。 |
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部品番号 |
NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NES1821B-30 is power GaAs FET which provides high output power and high g NEC |
文字列「 NES1821B30 」「 1821B 」で始まる検索結果です。 |
部品説明 |
1N1821 Diode Zener Single 22V 10% 10W 2-Pin DO-4 New Jersey Semiconductor |
1N1821A Diode Zener Single 22V 5% 10W 2-Pin DO-4 New Jersey Semiconductor |
1N1821C Diode Zener Single 22V 10% 10W 2-Pin DO-4 New Jersey Semiconductor |
2SD1821 Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Features q q q 2.1±0.1 0.425 1.25±0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allo Panasonic Semiconductor |
2SD1821A Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Features q q q 2.1±0.1 0.425 1.25±0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allo Panasonic Semiconductor |
2SK1821 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1821 DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Fast Switching Speed APPLICATIONS ·Chopper regulator and motor drive ·DC-DC converters ·UPS ABSOL Inchange Semiconductor |
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