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Datasheet NEL2012F03-24 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NEL2012F03-24 | NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER PRELIMINARY DATA SHEET
SILICON POWER TRANSISTOR
NEL2012F03-24
NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
DESCRIPTION
The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast |  NEC | transistor |
NEL Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NEL200101-24 | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DATA SHEET
SILICON POWER TRANSISTOR
NEL200101-24
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resisto NEC transistor | | |
| 2 | NEL2004F02-24 | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DATA SHEET
SILICON POWER TRANSISTOR
NEL2004F02-24
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resist NEC transistor | | |
| 3 | NEL2012F03-24 | NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER PRELIMINARY DATA SHEET
SILICON POWER TRANSISTOR
NEL2012F03-24
NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
DESCRIPTION
The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast NEC transistor | | |
| 4 | NEL2035F03-24 | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DATA SHEET
SILICON POWER TRANSISTOR
NEL2035F03-24
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2035F03-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resist NEC transistor | |
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