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Datasheet NE85619 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | NE85619 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
E
NE856 SERIES
• LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST
00 (CHIP)
VCC = 10 V, IC 7 mA MSG
4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 |
 NEC |
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| 3 | NE85619 | NPN Silicon Transistor SILICON TRANSISTOR
NE85619
/
2SC5006 JEITA Part No.
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers
fromVHF band to UHF band. Low noise figure, high g |
 CEL |
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| 2 | NE85619-A | NPN Silicon Transistor SILICON TRANSISTOR
NE85619
/
2SC5006 JEITA Part No.
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers
fromVHF band to UHF band. Low noise figure, high g |
CEL |
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| 1 | NE85619-T1-A | NPN Silicon Transistor SILICON TRANSISTOR
NE85619
/
2SC5006 JEITA Part No.
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers
fromVHF band to UHF band. Low noise figure, high g |
CEL |
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