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Datasheet NE713 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | NE713 | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71 |
 NEC |
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| 5 | NE71300 | LOW NOISE L TO K-BAND GaAs MESFET LOW NOISE L TO K-BAND GaAs MESFET
FEATURES
• LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE
3
NE71300
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 1 |
NEC |
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| 4 | NE71300-L | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71 |
NEC |
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| 3 | NE71300-M | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71 |
NEC |
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