Datasheet NE68519 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NE68519	NONLINEAR MODEL NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector NE68519 Q1 LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7.0e-16 109 1 15 0.19 7.90e-13 2.19 1 1.0	NEC

NE68 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NE68018	NONLINEAR MODEL NONLINEAR MODEL SCHEMATIC CCBPKG CCB LC LBX Base LB CCE LCX Collector NE68018 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.84e-16 124.9 1.05 11.9 0.027	NEC
NE68819	NONLINEAR MODEL NONLINEAR MODEL SCHEMATIC NE68819 CCBPKG 0.08 pF CCB LBX Base 0.19 nH 1.12 nH CBEPKG 0.3 pF LB 0.24 pF CCE 0.27 pF LE 0.6 nH LEX 0.19 nH Emitter Q1 LCX 0.5 nH Collector CCEPKG 0.3 pF BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE B	NEC
NE68030	NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz	CEL

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Número de pieza	Descripción	Fabricantes	PDF
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