Datasheet NE685 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
8	NE685	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ NE685 SERIES rs e b m : u E n ot T t n O	NEC
7	NE68518	NPN EPITAXIAL SILICON RF TRANSISTOR DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) NE68518 / 2SC5015 NPN SILICON RF TRANSISTOR FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low voltage operation • Low noise and high gain • 4-	CEL
6	NE68518	NONLINEAR MODEL NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB LC CCE Collector NE68518 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 109 1 15 0.19 7.9e-13 2.19 1 1.08 12.4 Infini	NEC
5	NE68519	NONLINEAR MODEL NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector NE68519 Q1 LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7.0e-16 109 1 15 0.19 7.90e-13 2.19 1 1.0	NEC

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Número de pieza	Descripción	Fabricantes	PDF
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