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Datasheet NE680 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 18 | NE680 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
00 (CHIP)
NE680 SERIES
E B
35 (MICRO- |
 NEC |
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| 17 | NE680 | NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • |
 CEL |
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| 16 | NE68000 | NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • |
CEL |
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| 15 | NE68018 | NONLINEAR MODEL NONLINEAR MODEL
SCHEMATIC
CCBPKG CCB LC LBX Base LB CCE LCX Collector
NE68018
Q1
CBEPKG
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.84e-16 124.9 1.05 11.9 0.027 1.0e-14 2.17 1 1.05 |
NEC |
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