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NE67300 PDF Datasheet

The NE67300 is (ne67300 / Ne67383) Low Noise Ku-k Band Gaas Mesfet For. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NE67300
(NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY

LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY FEATURES • VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB) NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 5 GA 4 16 20 3 12 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER (Triple Epitaxial Technology) • PROVEN RELIABILITY AND ST

NEC
NEC
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Recommended search results related to NE67300

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CY7C67300   EZ-Host Programmable Embedded USB Host/Peripheral Controller

CY7C67300 EZ-Host™ Programmable Embedded USB Host/Peripheral Controller Cypress Semiconductor Corporation Document #: 38-08015 Rev. *E • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised September 16, 2003 CY7C67300 TABLE OF CONTENTS 1.0 INTRODUCT

Cypress Semiconductor
Cypress Semiconductor
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NE67383   (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY

LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY FEATURES • VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB) NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 5 GA 4 16 20 3 12 • LG = 0.

NEC
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RLT67300T   High Power Red Laser Diode

RLT67300T TECHNICAL DATA High Power Red Laser Diode Emitting Aperture: 1x100 µm² Lasing Wavelength: typ. 670 nm Optical Power: 300 mW cw Package: TO3 w/o Photodiode NOTE! LASERDIODE MUST BE COOLED! Laser Diode Anode = Case Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTI

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[1]    

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Vishay Semiconductor
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