NE662M16-A データシート PDFこの部品の機能は「NPN SilICon Rf Transistor」です。 |
検索結果を表示する |
部品番号 |
NE662M16-A NPN SILICON RF TRANSISTOR DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise high-gain CEL |
文字列「 NE662M16 」「 662M16 」で始まる検索結果です。 |
部品説明 |
NE662M16 NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm NE662M16 DESCRIPTION NEC |
NE662M16 NPN SILICON RF TRANSISTOR DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC CEL |
NE662M16-T3 NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm NE662M16 DESCRIPTION NEC |
NE662M16-T3-A NPN SILICON RF TRANSISTOR DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC CEL |
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