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Datasheet NE662M16 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | NE662M16 | NPN SILICON RF TRANSISTOR DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
FEATURES • Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz � |
 CEL |
 |
| 4 | NE662M16 | NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm
NE662M16
DESCRIPTION
The NE662M16 is fab |
 NEC |
|
| 3 | NE662M16-A | NPN SILICON RF TRANSISTOR DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
FEATURES • Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz � |
CEL |
|
| 2 | NE662M16-T3 | NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm
NE662M16
DESCRIPTION
The NE662M16 is fab |
NEC |
|
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