| No | Part number | Description ( Function ) | Manufacturers | |
| 2 | NE6500496 | 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. PACKAGE DIMENSION (UNIT: mm) 1.0 ± 0.1 4.0 MIN BOTHLEADS SOURCE GATE φ |
 NEC |
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| 1 | NE6500496 | L&S BAND MEDIUM POWER GaAs MESFET L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS (TC= 25 °C unless otherwise noted) SYMBOLS VDSX VGDX VGSX IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V A mA W °C °C RATINGS 15 -18 -12 4.5 25 25 175 - |
 California Eastern |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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