Datasheet NE5550234 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NE5550234	Silicon Power MOS FET Data Sheet NE5550234 Silicon Power MOS FET FEATURES • • • • • R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, P	Renesas

NE5550 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NE5550779A	Silicon Power LDMOS FET Data Sheet NE5550779A Silicon Power LDMOS FET FEATURES • • • • • R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset	Renesas
NE5550234	Silicon Power MOS FET Data Sheet NE5550234 Silicon Power MOS FET FEATURES • • • • • R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 4	Renesas
NE5550979A	Silicon Power LDMOS FET Data Sheet NE5550979A Silicon Power LDMOS FET FEATURES • • • • • R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
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