NE500100 データシート PDFこの部品の機能は「(ne500100 / Ne500199) C-band Medium Power Gaas Mesfet」です。 |
検索結果を表示する |
部品番号 |
NE500100 (NE500100 / NE500199) C-Band Medium Power GaAs MESFET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUSTRY STANDARD PACKAGING • THIS DEVICE IS A NEC Electronics |
文字列「 NE500100 」「 500100 」で始まる検索結果です。 |
部品説明 |
0505J2500100JQT High Q capacitors [email protected] www.syfer.com High Q capacitors MS range +44 1603 723310 +44 1603 723301 The Syfer MS range offers a very stable, High Q material system that provides excellent, low loss performance in systems below 3GHz. Available in 0402 to 3640 case sizes with various te Syfer Technology |
0603J2500100JQT High Q capacitors [email protected] www.syfer.com High Q capacitors MS range +44 1603 723310 +44 1603 723301 The Syfer MS range offers a very stable, High Q material system that provides excellent, low loss performance in systems below 3GHz. Available in 0402 to 3640 case sizes with various te Syfer Technology |
0805J2500100JQT High Q capacitors [email protected] www.syfer.com High Q capacitors MS range +44 1603 723310 +44 1603 723301 The Syfer MS range offers a very stable, High Q material system that provides excellent, low loss performance in systems below 3GHz. Available in 0402 to 3640 case sizes with various te Syfer Technology |
BQ500100 bq500100 20-V High-Side Current Sensor for Wireless Charging Texas Instruments |
CPT500100 Schottky PowerMod Microsemi Corporation |
MBR500100CT (MBR50045CT - MBR500100CTR) Schottky Power Diode Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR50045CT thru MBR500100CTR Silicon Schottky Diode, 500A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) P Naina Semiconductor |
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