Datasheet NE3512S02 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NE3512S02	HETERO JUNCTION FIELD EFFECT TRANSISTOR HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package APPLICATIONS • C to Ku-	CEL

NE3512 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NE3512S02	HETERO JUNCTION FIELD EFFECT TRANSISTOR HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package APPLI	CEL

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Número de pieza	Descripción	Fabricantes	PDF
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