NE32400 データシート PDFこの部品の機能は「C To Ka Band Super Low Noise Amplifier N-channel Hj-fet Chip」です。 |
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部品番号 |
NE32400 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that ut NEC |
文字列「 NE32400 」「 32400 」で始まる検索結果です。 |
部品説明 |
HYM324000GD- 4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 4M × 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 324000GD-50/-60 Preliminary Information • • 4 0194 034 words by 32-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Siemens |
IS42LS32400A 128-MBIT SYNCHRONOUS DRAM IS42S81600A, IS42LS81600A IS42S16800A, IS42LS16800A IS42S32400A, IS42LS32400A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 133 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding r Integrated Circuit Solution |
IS42RM32400E 128Mb Mobile Synchronous DRAM IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Pro ISSI |
IS42RM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM IS42RM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive e ISSI |
IS42RM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenc ISSI |
IS42RM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM IS42/45SM/RM/VM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400H are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referen ISSI |
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