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NE32400 データシート PDF

この部品の機能は「C To Ka Band Super Low Noise Amplifier N-channel Hj-fet Chip」です。


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部品番号
NE32400

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP


DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that ut


NEC
NEC

データシート pdf



文字列「 NE32400 」「 32400 」で始まる検索結果です。

部品説明

HYM324000GD-

4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE

4M × 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 324000GD-50/-60 Preliminary Information • • 4 0194 034 words by 32-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version)

Siemens
Siemens

 データシート pdf


IS42LS32400A

128-MBIT SYNCHRONOUS DRAM

IS42S81600A, IS42LS81600A IS42S16800A, IS42LS16800A IS42S32400A, IS42LS32400A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 133 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding r

Integrated Circuit Solution
Integrated Circuit Solution

 データシート pdf


IS42RM32400E

128Mb Mobile Synchronous DRAM

IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Pro

ISSI
ISSI

 データシート pdf


IS42RM32400F

1M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42RM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive e

ISSI
ISSI

 データシート pdf


IS42RM32400G

1M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenc

ISSI
ISSI

 データシート pdf


IS42RM32400H

1M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45SM/RM/VM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400H are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referen

ISSI
ISSI

 データシート pdf

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