NDH854P データシート PDFこの部品の機能は「P-channel Enhancement Mode Field Effect Transistor」です。 |
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部品番号 |
NDH854P P-Channel Enhancement Mode Field Effect Transistor May 1997 NDH854P P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprieta Fairchild |
文字列「 NDH854 」「 854P 」で始まる検索結果です。 |
部品説明 |
2N2854 Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 Central |
2N3854 Trans GP BJT NPN 80V 5A 3-Pin TO-59 New Jersey Semiconductor |
2N3854A Trans GP BJT NPN 80V 5A 3-Pin TO-59 New Jersey Semiconductor |
2N4854 NPN/PNP Silicon Complementary Small Signal Dual Transistor Microsemi Corporation |
2N4854 Trans GP BJT NPN/PNP 40V 0.6A 6-Pin TO-78 New Jersey Semiconductor |
2N4854 COMPLEMENTARY DUAL AMPLIFIER TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector 1 to Collector 2 Voltage Voltage Rating any Lead to Case Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T/ = 25°C Derate above 25°C @Total Device Dissipation Tc = 2 Motorola Semiconductors |
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