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Datasheet NDH832P Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NDH832P | P-Channel Enhancement Mode Field Effect Transistor June 1996
NDH832P P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize | Fairchild | transistor |
NDH Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NDH8301N | Dual N-Channel Enhancement Mode Field Effect Transistor December 1996
NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to Fairchild transistor | | |
2 | NDH8303N | Dual N-Channel Enhancement Mode Field Effect Transistor May 1997
NDH8303N Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored Fairchild transistor | | |
3 | NDH8304 | Dual P-Channel Enhancement Mode Field Effect Transistor May 1997
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored Fairchild transistor | | |
4 | NDH8304P | Dual P-Channel Enhancement Mode Field Effect Transistor May 1997
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored Fairchild transistor | | |
5 | NDH831N | N-Channel Enhancement Mode Field Effect Transistor July 1996
NDH831N N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize Fairchild transistor | | |
6 | NDH8320C | Dual N & P-Channel Enhancement Mode Field Effect Transistor December 1996
NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is espec Fairchild transistor | | |
7 | NDH8321C | Dual N & P-Channel Enhancement Mode Field Effect Transistor January 1999
NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especi Fairchild transistor | |
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