|
|
Datasheet NDBA170N06A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NDBA170N06A | N-Channel Power MOSFET, Transistor Ordering number : ENA2250
NDBA170N06A
N-Channel Power MOSFET
60V, 170A, 3.3mΩ, TO-263
Features
• On-resistance RDS(on)=2.5mΩ(typ.) • Input Capacitance Ciss=15800pF(typ.) • Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source |  ON Semiconductor | mosfet |
NDB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NDB171 | Transient Voltage Suppressor Diode NDB171
Transient Voltage Suppressor Diode
Bi-directional ESD Protection TVS Diode
General Description
The NDB171 device is help protect sensitive electronic equipment against electrostatic discharge (ESD). The NDB171 device is safely dissipate ESD strikes, exceeding the IEC 61000-4-2 International  AUK diode | | |
| 2 | NDB4050 | N-Channel Enhancement Mode Field Effect Transistor July 1996
NDP4050 / NDB4050 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo  Fairchild transistor | | |
| 3 | NDB4050L | N-Channel Logic Level Enhancement Mode Field Effect Transistor April 1996
NDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces Fairchild transistor | | |
| 4 | NDB4060 | N-Channel Enhancement Mode Field Effect Transistor July 1996
NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo Fairchild transistor | | |
| 5 | NDB4060L | N-Channel Logic Level Enhancement Mode Field Effect Transistor April 1996
NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces Fairchild transistor | | |
| 6 | NDB408A | N-Channel Enhancement Mode Field Effect Transistor May 1994
NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technol Fairchild transistor | | |
| 7 | NDB408AE | N-Channel Enhancement Mode Field Effect Transistor May 1994
NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technol Fairchild transistor | |
| Esta página es del resultado de búsqueda del NDBA170N06A. Si pulsa el resultado de búsqueda de NDBA170N06A se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |