NCV8878 データシート PDFこの部品の機能は「Automotive Grade Start-stop Non-synchronous Boost Controller」です。 |
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部品番号 |
NCV8878 Automotive Grade Start-Stop Non-Synchronous Boost Controller NCV8878 Automotive Grade Start-Stop Non-Synchronous Boost Controller The NCV8878 is a Non-Synchronous Boost controller designed to supply a minimum output voltage during Start-Stop vehicle operation ON Semiconductor |
文字列「 NCV8878 」「 8878 」で始まる検索結果です。 |
部品説明 |
AMC8878 (AMC8878 / AMC8879) LOW NOISE 150mA LOW DROPOUT REGULATOR AMC DOC. #:AMC8878_D (LF) March 2004 ADD MICROTECH CORP. DESCRIPTION AMC8878/8879 LOW NOISE 150mA LOW DROPOUT REGULATOR FEATURES The AMC8878/8879 series is a low noise, low dropout linear regulator operating from 2.5V to 6.5V input. An external capacit ADD Microtech |
BD8878FV Output Coupling Capacitor-less Line Amplifier Output Coupling Capacitor-less Line Amplifier BD8876FV, BD8878FV Description BD8876FV, BD8878FV are output coupling capacitor-less line amplifiers. These IC have a negative voltage generator built-in and generate the negative voltage from the supply voltage. It is possible to dr ROHM Semiconductor |
CXD8878Q TRIPLE DIGITAL MIX EFFECT ********** TRIPLE DIGITAL MIX EFFECT -TOP VIEW- CXD8878Q(1/3) IL08 80 70 60 V DD (+5V) V DD (+5V) GND 51 81 50 90 GND GND 40 VDD (+5V) VDD (+5V) GND 100 31 1 10 20 30 (V DD=+5V) PIN I/O No. I 1 I 2 3 I 4 I 5 I 6 I 7 I 8 I 9 I 10 O 11 O 12 ETC |
FDC8878 N-Channel PowerTrench MOSFET FDC8878 N-Channel PowerTrench® MOSFET FDC8878 N-Channel PowerTrench® MOSFET 30 V, 8.0 A, 16 mΩ Features General Description January 2012 Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A High performance trench technolog Fairchild Semiconductor |
FDD8878 N-Channel PowerTrench MOSFET FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET January 2005 FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET 30V, 40A, 15mΩ Features r DS(ON) = 15mΩ, VGS = 10V, ID = 35A r DS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low r DS(ON Fairchild Semiconductor |
FDMA8878 Single N-Channel PowerTrench MOSFET FDMA8878 Single N-Channel Power Trench® MOSFET May 2012 FDMA8878 Single N-Channel Power Trench® MOSFET 30 V, 9.0 A, 16 mΩ Features Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A High performance trench technology for e Fairchild Semiconductor |
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