Datasheet NCE2312A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NCE2312A	NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE2312A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protect	NCE Power Semiconductor

NCE23 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NCE2305	NCE P-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE2305 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as	NCE Power Semiconductor
NCE2304	NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE2304 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2304 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Genera	NCE Power Semiconductor
NCE2301	NCE P-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE2301 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as	NCE Power Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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