NCE1579 データシート PDFこの部品の機能は「Nce N-channel Enhancement Mode Power Mosfet」です。 |
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部品番号 |
NCE1579 NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE1579 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE1579 uses advanced trench technology and design to provide excellent RDS(ON) with low g NCE Power Semiconductor |
文字列「 NCE1579 」「 1579 」で始まる検索結果です。 |
部品説明 |
2SA1579 High-voltage Amplifier Transistor (−120V/ −50mA) 2SA1579 / 2SA1514K High-voltage Amplifier Transistor (-120V,-50mA) Datasheet Parameter VCEO IC Value -120V -50mA lFeatures 1)High breakdown voltage. (BVCEO=-120V) 2)Complements the 2SC4102/2SC3906K lOutline SOT-323 SOT-346 2SA1579 2SA1514K (UMT3) (SMT3) � ROHM Semiconductor |
2SA1579 Transistor SMD Type High-Voltage Amplifier Transistor 2SA1579 Transistors Features High breakdown voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power diss Kexin |
2SA1579 PNP Silicon Plastic Encapsulated Transistor 2SA1579 Elektronische Bauelemente -0.05A , -120V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Breakdown Voltage. (BVCEO = -120V) Complementary of the 2SC4102 A L 3 SOT-323 3 Top Vi SeCoS |
2SA1579 Transistor 2SA1 57 9 TRANSISTOR(PNP) SOT-323 1. BASE FEATURES z High breakdown voltage. (BVCEO = -120V) z Complements the 2SC4102 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Jin Yu Semiconductor |
2SA1579 Transistor SMD Type Product specification Transistors 2SA1579 Features High breakdown voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Jun TY Semiconductor |
2SA1579W PNP Silicon Epitaxial Planar Transistor BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES z z Power dissipation.(PC=200mW) Excellent HFE Linearity. Production specification 2SA1579W Pb Lead-free APPLICATIONS z General purpose application. ORDERING INFORMATION Type No. 2SA1579W Marking HP/HQ/HR Galaxy Semi-Conductor |
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