データシート PDF 検索 - DataSheet.jp

NCE11N60 データシート PDF

この部品の機能は「N-channel Super Junction Power Mosfet」です。


検索結果を表示する

部品番号
NCE11N60

N-Channel Super Junction Power MOSFET


NCE11N60D,NCE11N60,NCE11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low g


NCE Power Semiconductor
NCE Power Semiconductor

データシート pdf



文字列「 NCE11N60 」「 11N60 」で始まる検索結果です。

部品説明

NCE11N60D

N-Channel Super Junction Power MOSFET

NCE11N60D,NCE11N60,NCE11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirem

NCE Power Semiconductor
NCE Power Semiconductor

 データシート pdf


NCE11N60F

N-Channel Super Junction Power MOSFET

NCE11N60D,NCE11N60,NCE11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirem

NCE Power Semiconductor
NCE Power Semiconductor

 データシート pdf


NCE11N60T

N-Channel Super Junction Power MOSFET

NCE11N60T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC

NCE Power Semiconductor
NCE Power Semiconductor

 データシート pdf


11N60C3

SPP11N60C3

SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V

Infineon Technologies
Infineon Technologies

 データシート pdf


11N60K-MT

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 11N60K-MT Preliminary 11A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minim

Unisonic Technologies
Unisonic Technologies

 データシート pdf


11N60S5

SPP11N60S5

SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.38 11 V Ω A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated •

Infineon Technologies AG
Infineon Technologies AG

 データシート pdf

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