NCE11N60 データシート PDFこの部品の機能は「N-channel Super Junction Power Mosfet」です。 |
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部品番号 |
NCE11N60 N-Channel Super Junction Power MOSFET NCE11N60D,NCE11N60,NCE11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low g NCE Power Semiconductor |
文字列「 NCE11N60 」「 11N60 」で始まる検索結果です。 |
部品説明 |
NCE11N60D N-Channel Super Junction Power MOSFET NCE11N60D,NCE11N60,NCE11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirem NCE Power Semiconductor |
NCE11N60F N-Channel Super Junction Power MOSFET NCE11N60D,NCE11N60,NCE11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirem NCE Power Semiconductor |
NCE11N60T N-Channel Super Junction Power MOSFET NCE11N60T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC NCE Power Semiconductor |
11N60C3 SPP11N60C3 SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V Infineon Technologies |
11N60K-MT N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 11N60K-MT Preliminary 11A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minim Unisonic Technologies |
11N60S5 SPP11N60S5 SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.38 11 V Ω A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Infineon Technologies AG |
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