Datasheet NCE1012E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NCE1012E	N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE1012E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protecti	NCE Power Semiconductor

NCE10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NCE1012E	N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE1012E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use a	NCE Power Semiconductor
NCE10G120	Trench NPT IGBT http://www.ncepower.com NCE10G120 1200V, 10A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=10A z High input impedance Applications z Inductive heating, Microwave oven, Inverter, UPS, etc. z Soft s	NCE Power Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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