| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | NCE0218D | NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE0218D NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0218D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ) ● High density cell design for u |
 NCE Power Semiconductor |
|
0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to NCE0218D |
| Part No | Description ( Function) | Manufacturers | |
| NCE0218 | NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE0218 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0218 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features |
NCE Power Semiconductor |
|
| NCE0218F | NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE0218F NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0218F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURE |
NCE Power Semiconductor |
|
| NCE0218K | NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE0218K NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0218K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURE |
NCE Power Semiconductor |
|
| CGR-0218Z | PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER CGR-0218Z Push-Pull 5MHz to 210 MHz High Linearity InGaP HBT Amplifier CGR-0218Z PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed with t |
 RF Micro Devices |
|
| CLM021818 | Limiters Limiters 一落 FEATURES: Coverage From 0.1 to 65.0 GHz (Octave/Multioctave) Up to 2 Watt CW and 150W Peak (1 µsec) Power Handling Capability Fast Response and Short Recovery Time (10 to 20 µsec typical) Compact/Rugged Thin-Film Construction |
 CERNEX |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
|||