NCE0203S PDF Datasheet

http://www.ncepower.com Pb Free Product NCE0203S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V （Typ：56mΩ） ● High density cell desig

ABB0203 Low Skew Output Buffer FEATURES • • • • • • • • • Frequency range 75 ~ 180MHz. Internal phase locked loop will allow spread spectrum modulation on reference clock to pass to the outputs (up to 100kHz SST modulation). Zero input - outp

AP0203GMT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 2.2mΩ 155A D S D D D D

Advanced Power Electronics Corp. AP0203GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement SO-8 Compatible with Heatsink Low On-resistance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 2.2mΩ 90A Description Advanced Power MOSFETs from APEC

Advanced Power Electronics Corp. AP0203GMT-L Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance G ▼ RoHS Compliant & Halogen-Free S Description AP0203 series are from Advanced

ERU chokes ERU 19, helically wound Series/Type: Date: B82559*A019 June 2016 a~í~=pÜÉÉí ¤EPCOS AG 2016. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is pr