NB2879A データシート PDFこの部品の機能は「Reduced Emi Clock Synthesizer」です。 |
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部品番号 |
NB2879A Reduced EMI Clock Synthesizer www.Datasheet.jp NB2879A Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB ON Semiconductor |
文字列「 NB2879 」「 2879A 」で始まる検索結果です。 |
部品説明 |
2879 QUAD HIGH-CURRENT DARLINGTON SWITCHES 2878 AND 2879 QUAD HIGH-CURRENT DARLINGTON SWITCHES These quad Darlington arrays are designed to serve as interface between low-level logic and peripheral power devices such as solenoids, motors, incandescent displays, heaters, and similar loads of up to 320 W per channel. Both Allegro MicroSystems |
2N2879 (2N2877 - 2N2880) NPN Silicon High Power Transistors w w w a t a D . S 4 t e e h U m o .c w w w a t a D . S 4 t e e h U m o .c General Semiconductor |
2N2879 Trans GP BJT NPN 80V 5A 4-Pin TO-111 New Jersey Semiconductor |
2SC2879 TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE) Toshiba Semiconductor |
2SC2879 NPN SILICON RF POWER TRANSISTOR 2SC2879 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up tp 28 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FULL R FEATURES: • PG = 13 Typ. min. at 100 W/28 MHz • IMD3 = -2 ASI |
2SC2879A SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 100WPEP : Gp = 13dB : Toshiba |
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