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Datasheet N0604N Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 N0604N   N-CHANNEL MOSFET

Data Sheet N0604N N-channel MOSFET 60 V, 82 A, 6.5 mΩ Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 Features • Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Lo
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N06 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
N0600N

MOS FIELD EFFECT TRANSISTOR

Preliminary Data Sheet N0600N MOS FIELD EFFECT TRANSISTOR Description R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (
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N0602N

N-CHANNEL MOSFET

Preliminary Data Sheet N0602N N-CHANNEL MOSFET FOR SWITCHING Description R07DS0558EJ0100 Rev.1.00 Nov 07, 2011 The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (V
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N0601N

N-CHANNEL MOSFET

Preliminary Data Sheet N0601N N-CHANNEL MOSFET FOR SWITCHING Description R07DS0557EJ0100 Rev.1.00 Nov 07, 2011 The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.2 mΩ MAX. (V
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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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