Datasheet MTW8N50E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTW8N50E	TMOS POWER FET	Motorola Semiconductors

MTW8N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTW8N60E	TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM MTW8N60E Preferred Device Power MOSFET 8 Amps, 600 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is design	ON Semiconductor
MTW8N60E	TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW8N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW8N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage	Motorola Semiconductors
MTW8N50E	TMOS POWER FET	Motorola Semiconductors

Esta página es del resultado de búsqueda del MTW8N50E. Si pulsa el resultado de búsqueda de MTW8N50E se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap