Datasheet MTW6N60E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTW6N60E	TMOS POWER FET	Motorola Semiconductors

MTW6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTW6N100E	TMOS POWER FET MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW6N100E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 With Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to pro	Motorola Semiconductors
MTW6N100E	Power MOSFET ( Transistor ) MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is desig	ON Semiconductor
MTW6N60E	TMOS POWER FET	Motorola Semiconductors

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