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Datasheet MTP2N60E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MTP2N60E | TMOS POWER FET
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP2N60E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking ca |
 Motorola Semiconductors |
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| 2 | MTP2N60E | Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 |
 New Jersey Semiconductor |
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| 1 | MTP2N60E | Power Field Effect Transistor MTP2N60E
Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this ad |
 ON Semiconductor |
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