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Datasheet MTD3055V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | MTD3055V | N-Channel Enhancement Mode Field Effect Transistor MTD3055V
August 1999 DISTRIBUTION GROUP*
MTD3055V
N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. T |
 Fairchild Semiconductor |
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| 5 | MTD3055V | Power MOSFET 12Amps MTD3055V
Preferred Device
Power MOSFET 12 Amps, 60 Volts
N–Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices |
 ON Semiconductor |
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| 4 | MTD3055V | TMOS POWER FET 12 AMPERES 60 VOLTS RDS MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD3055V/D
TMOS V Power Field Effect Transistor DPAK for Surface Mount
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than do |
 Motorola Semiconductors |
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| 3 | MTD3055VL | Power MOSFET 12 Amps MTD3055VL
Preferred Device
Power MOSFET 12 Amps, 60 Volts
N–Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices |
ON Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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