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MTD2525J Logic Supply Vcc=5V Load Supply Load Supply Logic Supply Vcc=5V Vcc2 Vcc 2 TSD UVLO 1.25REF PHA A1 DEC A RtA CR A CtA OSC Control Circuit Control Circuit RsA1 OUTA 1-1 OUT A 1-2 Vmm A RsA2 PHA B2 PHA A2 cpA cpB cpC RsB2 OUT A 2-1 OUT A 2-2 Charge Pump

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N80E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced

CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTD030N10QJ3 Spec. No. : C168J3 Issued Date : 2016.03.07 Revised Date : 2016.04.27 Page No. : 1/9 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=10A 100V 29A 23mΩ(typ) Features  Low Gate Charge  Simple

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high en

MTD48 April 1994 48 Lead Molded Thin Shrink Small Outline Package JEDEC NS Package Number MTD48 All dimensions are in millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS

CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTD9D0N06H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDSON(TYP) VGS=10V, ID=25A VGS=4.5V, ID=25A • Single Drive Req