|
|
Datasheet MTD1N80E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | MTD1N80E | TMOS POWER FET 1.0 AMPERES 800 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD1N80E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking |
Motorola Semiconductors |
MTD1N Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
MTD1N60E | TMOS POWER FET 1.0 AMPERE 600 VOLTS |
Motorola Semiconductors |
|
MTD1N80E | TMOS POWER FET 1.0 AMPERES 800 VOLTS |
Motorola Semiconductors |
|
MTD1N50E | TMOS POWER FET 1.0 AMPERE 500 VOLTS |
Motorola Semiconductors |
Esta página es del resultado de búsqueda del MTD1N80E. Si pulsa el resultado de búsqueda de MTD1N80E se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |