MT6L11FS データシート PDFこの部品の機能は「Vhf-uhf Band Low-noise Amplifier ApplICations」です。 |
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部品番号 |
MT6L11FS VHF-UHF Band Low-Noise Amplifier Applications MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. U Toshiba Semiconductor |
文字列「 MT6L11 」「 6L11FS 」で始まる検索結果です。 |
部品説明 |
16114FP HA16114FP www.datasheet.jp To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporat Renesas |
1N2611 GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor |
1N2611S GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor |
1N3611 MILITARY RECTIFIERS 1N3611 thru 1N3614, 1N3957 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/228 and is ideal for high-reliability applications where a failur Microsemi Corporation |
1N3611 (1N3611 - 1N3957) VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLAS RECTIFIERS 1N3611 thru 1N3614, 1N3957 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/228 and is ideal for high-reliability applications where a failur Microsemi Corporation |
1N3611 (1N3611 - 1N3957) Standard Recovery Rectifier Diode POWER DISCRETES Description Quick reference data VR = IO = trr = V = F 1N3611, 1N3612, 1N3613, 1N3614, 1N3957 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode Features Low reverse leakage current Hermetically sealed in Metoxilite fused metal oxid Semtech Corporation |
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