MT6582 データシート PDF 検索 |
番号 | 部品番号 | 部品説明 | メーカ | |
1 | MT6582 | HSPA+ Smartphone Application Processor MT6582 HSPA+ Smartphone Application Processor Technical Brief Version: Release date: 1.0 2013-06-14 © 2013 MediaTek Inc. This document contains information that is proprietary to MediaTek Inc. Unauthorized reproduction or disclosure of this information in whole or in part is strictly prohibited. Specifications are subject to change without notice. Free Datasheet http://www |
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MT6 Datasheet ( データシート ) - 検索結果 |
部品番号 | 部品説明 | メーカ | |
MT6L53S | VHF-UHF Band Low Noise Amplifier Application MT6L53S Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L53S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application · Two devices are built into the sES6 package, which is smaller and thinner than the super-th |
![]() Toshiba Semiconductor |
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MT6L71FS | VHF-UHF Band Low Noise Amplifier Application MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. 1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05 Unit: mm 1.0±0.05 |
![]() Toshiba Semiconductor |
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MT6L11FS | VHF-UHF Band Low-Noise Amplifier Applications MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. Unit: mm 1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05 1.0±0.05 |
![]() Toshiba Semiconductor |
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MT6011 | P-Channel Power MOSFET MOS-TECH Semiconductor Co.,LTD MT6011 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to |
![]() MOS-TECH |
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MT6L67FS | VHF-UHF Band Low Noise Amplifier Application MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Two devices are built in to the fine pich small mold package (6pins):fs6 0.1±0.05 1.0±0.05 0.8±0.05 Unit: mm 0.1±0.05 0.15±0.05 • It |
![]() Toshiba Semiconductor |
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MT6L04AT | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPEl |
![]() Toshiba Semiconductor |
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MT600 | Diode |
![]() American Microsemiconductor |
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部品番号 | 部品説明 | メーカ | |
ALC887 | The ALC887 is a 7.1 Channel High Definition Audio Codec with two independent SPDIF outputs. Featuring eight channels of DAC support 7.1 sound playback, and integrates two stereo ADC that can support a stereo microphone, and feature Acoustic Echo Cancellation (AEC), Beam Forming (BF), and Noise Suppression (NS) for voice applications. |
![]() Realtek |
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BK3431 | The BK3431 chip is a highly integrated Bluetooth 4.0 low energy single mode device. It integrates a high-performance RF transceiver, baseband, ARM-core Micro processor, rich feature peripheral units, programmable protocol and profile
to support BLE application. The Flash program memory makes it suitable for customized applications.
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![]() Beken |
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C1318 | This is a 2SC1318, Vcbo=60V, Silicon NPN epitaxial planer type Transistor, TO-92 Package. |
![]() Panasonic |
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F1B2CCI | VRRM=200V, Stack Silicon Diffused Diode, TO-220IS Package. |
![]() KEC |
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20N60C2 | 650V, Cool MOS Power Transistor, SPP20N60C2, SPB20N60C2, SPA20N60C2. |
![]() Infineon |
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