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MT6582 HSPA+ Smartphone Application Processor Technical Brief Version: Release date: 1.0 2013-06-14 © 2013 MediaTek Inc. This document contains information that is proprietary to MediaTek Inc. Unauthorized reproduction or disclosure of this information in whole or in part is strictly prohibited. Specifications are subject to change without notice. Free Datasheet http://www

MT6L55E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm • Two devices are built into the super-thin and ultra-super-mini (6-pin) ES6 package. www.DataSheet4

MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Two devices are built in to the fine pich small mold package (6pins):fs6 0.1±0.05 1.0±0.05 0.8±0.05 Unit: mm 0.1±0.05 0.15±0.05 • It

MT6L53S Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L53S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application · Two devices are built into the sES6 package, which is smaller and thinner than the super-th

MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. 1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05 Unit: mm 1.0±0.05

MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. Unit: mm 1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05 1.0±0.05

MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Two devices are built in to the fine pich small mold package (6pins):fs6 0.1±0.05 1.0±0.05 0.8±0.05 Unit: mm 0.1±0.05 0.15±0.05 • It

MOS-TECH Semiconductor Co.,LTD MT6011 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to