MT3S113TU データシート PDFこの部品の機能は「SilICon-germanium NPN Epitaxial Planar Type Transistor」です。 |
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部品番号 |
MT3S113TU Silicon-Germanium NPN Epitaxial Planar Type Transistor MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES • Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GH Toshiba Semiconductor |
文字列「 MT3S113 」「 3S113TU 」で始まる検索結果です。 |
部品説明 |
MT3S113 Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R7 1. Base 2 Toshiba Semiconductor |
MT3S113P Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking R7 Absolut Toshiba Semiconductor |
2SC3113 Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 2SC3113 For Audio Amplifier and Switching Applications Unit: mm · High DC current gain: hFE = 600~3600 · High breakdown voltage: VCEO = 50 V · High collector current: IC = 150 mA (max) · Small package Maximum Ratings Toshiba Semiconductor |
2SK3113 SWITCHING N-CHANNEL POWER MOSFET DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as NEC |
2SK3113B MOS FIELD EFFECT TRANSISTOR DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such a NEC |
3113 HALL-EFFECT SWITCHES
Allegro MicroSystems |
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