Datasheet MT3S113P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MT3S113P	Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) • High Gain:\|S21e\|2=10.5dB(Typ.) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (T	Toshiba Semiconductor

MT3S1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MT3S111TU	Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Features • Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) • High Gain: \|S21e\|2=12.5 dB (typ.) (@ f=1 GHz) 2.1±0.1 1.7±0.1 Unit: mm	Toshiba Semiconductor
MT3S11FS	Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications MT3S11FS Unit: mm 0.2±0.05 0.6±0.05 0.35±0.05 0.15±0.05 • Superior performance in oscillator applications. • Superior noise	Toshiba Semiconductor
MT3S111P	Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) • High Gain: \|S21e\|2=10.5 dB (typ.) (@f=1 GHz) Unit: mm Marking R5 Absolut	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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