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Datasheet MT3S113 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MT3S113 | Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S113
MT3S113
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
Unit: mm
FEATURES
• Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz)
Marking
R7
1. Base 2. Emitter 3. Collect |
 Toshiba Semiconductor |
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| 2 | MT3S113P | Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S113P
MT3S113P
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
Unit: mm
FEATURES
• Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz)
Marking
R7
Absolute Maximum Ratings (T |
Toshiba Semiconductor |
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| 1 | MT3S113TU | Silicon-Germanium NPN Epitaxial Planar Type Transistor MT3S113TU
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S113TU
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
FEATURES
• Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=12.5dB(Typ.) (@ f=1GHz)
2.1±0.1 1.7±0.1
Unit: mm
0.3-+00..015
1 23
2 |
Toshiba Semiconductor |
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