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Datasheet MT3S111 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MT3S111 | Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features
• Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz)
MT3S111
Unit: mm
Marking
R5
Absolute Maximum Ratings (Ta = 25 |
 Toshiba Semiconductor |
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| 2 | MT3S111P | Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111P
MT3S111P
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features
• Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz)
Unit: mm
Marking
R5
Absolute Maximum Ratings (T |
Toshiba Semiconductor |
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| 1 | MT3S111TU | Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111TU
MT3S111TU
VHF-UHF Low-Noise, Low-Distortion Amplifier Application
Features
• Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) • High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz)
2.1±0.1 1.7±0.1
Unit: mm
0.3-+00..015
1 23 |
Toshiba Semiconductor |
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